On-Wafer Device Characterization Including Uncertainty Estimates to 1.0 THz
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data for Figure 6There are two sections. 1st section is the measured data and 2nd section is the simulated data. Commented lines start with a % sign. Data lines are space delimited.
Magnitude and phase of the measured and simulated S-parameters for the DCB1...
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data for Figure 7There are two sections. 1st section is the measured data and 2nd section is the simulated data. Commented lines start with a % sign. Data lines are space delimited.
Magnitude and phase of the measured and simulated S-parameters for the DCB2...
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data for Figure 8There are three sections. 1. Measured capacitance of Tech. 1 and Tech. 2 series capacitors. 2. Simulated capacitance of the the Tech 1. series capacitor. 3. Simulated capacitance of the Tech 2. series capacitor. Commented lines start with a % sign. Data lines are space delimited.
Measured and simulated capacitance of the technology 1 (multi-layer CPW-G)...
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data for Figure 10There are two sections. 1st section is the measured data and 2nd section is the simulated data. Commented lines start with a % sign. Data lines are space delimited.
Magnitude and phase of the measured and simulated S-parameters for the SHNT2...
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data for Figure 9There are two sections. 1st section is the measured data and 2nd section is the simulated data. Commented lines start with a % sign. Data lines are space delimited.
Magnitude and phase of the measured and simulated S-parameters for the SHNT1...
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data for Figure 11There are three sections. 1. Measured capacitance of Tech. 1 and Tech. 2 shunt capacitors. 2. Simulated capacitance of the the Tech 1. shunt capacitor. 3. Simulated capacitance of the Tech 2. shunt capacitor. Commented lines start with a % sign. Data lines are space delimited.
Measured and simulated capacitance of the technology 1 (multi-layer CPW-G)...
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data for Figure 12There are two sections. 1st section is the measured data and 2nd section is the simulated data. Commented lines start with a % sign. Data lines are space delimited.
Measured and simulated capacitance for SHNT 1, the shunt capacitor fabricated...
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data for Figure 13There are two sections. 1st section is the measured data and 2nd section is the simulated data. Commented lines start with a % sign. Data lines are space delimited.
Measured and simulated capacitance for SHNT 1, the shunt capacitor fabricated...
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READMETEXT
3151_README.txt
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data for Figure 3Commented lines start with a % sign. Data lines are space delimited.
Calibrated S-parameters of a thru in both technology 1 and technology 2 that...
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Dates
Metadata Created Date | March 12, 2024 |
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Metadata Updated Date | March 12, 2024 |
Data Update Frequency | irregular |
Metadata Source
- Data.json Data.json Metadata
Harvested from NIST
Additional Metadata
Resource Type | Dataset |
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Metadata Created Date | March 12, 2024 |
Metadata Updated Date | March 12, 2024 |
Publisher | National Institute of Standards and Technology |
Maintainer | |
Identifier | ark:/88434/mds2-3151 |
Data First Published | 2024-02-26 |
Language | en |
Data Last Modified | 2024-01-23 00:00:00 |
Category | Electronics:Semiconductors |
Public Access Level | public |
Data Update Frequency | irregular |
Bureau Code | 006:55 |
Metadata Context | https://project-open-data.cio.gov/v1.1/schema/data.json |
Schema Version | https://project-open-data.cio.gov/v1.1/schema |
Catalog Describedby | https://project-open-data.cio.gov/v1.1/schema/catalog.json |
Harvest Object Id | d1492aaa-6718-4252-88d5-0982540d975a |
Harvest Source Id | 74e175d9-66b3-4323-ac98-e2a90eeb93c0 |
Harvest Source Title | NIST |
Homepage URL | https://data.nist.gov/od/id/mds2-3151 |
License | https://www.nist.gov/open/license |
Program Code | 006:045 |
Source Datajson Identifier | True |
Source Hash | 1ef2c65edea5410f92023f40c94e263269afc491e72ebba4808efcba2b2b1470 |
Source Schema Version | 1.1 |
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