On-Wafer Device Characterization Including Uncertainty Estimates to 1.0 THz
data published in paper "On-Wafer Device Characterization Including Uncertainty Estimates to 1.0 THz"
This dataset contains the calibrated scattering parameters (S-parameters) of a thru that was not used in calibration, and the simulated and calibrated S-parameters for series and shunt capacitors for both technology 1 and technology 2. It also contains the simulated and extracted capacitance from these S-parameters of the series and shunt capacitors. It contains the simulated and extracted capacitance for the shunt capacitor from one site in technology 1 and 95% prediction intervals (uncertainties) from electronic variation in the vector network analyzer (VNA), probe placement error, and the capacitance per unit length correction variation. Finally, it contains the extracted capacitance for multiple sites for the shunt capacitor in technology 1. All simulated S-parameters obtained using a 2.5D method of moments commercial solver. Simulated capacitance obtained from the simulated S-parameters.
Resources
10 resources available
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data for Figure 3
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data for Figure 6
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data for Figure 7
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data for Figure 9
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data for Figure 10
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data for Figure 13
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data for Figure 12
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data for Figure 8
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data for Figure 11
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README
TXT
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Complete Metadata
| @type | dcat:Dataset |
|---|---|
| accessLevel | public |
| accrualPeriodicity | irregular |
| bureauCode |
[ "006:55" ] |
| contactPoint |
{ "fn": "Rob Jones", "hasEmail": "mailto:robert.jones@nist.gov" } |
| description | data published in paper "On-Wafer Device Characterization Including Uncertainty Estimates to 1.0 THz" This dataset contains the calibrated scattering parameters (S-parameters) of a thru that was not used in calibration, and the simulated and calibrated S-parameters for series and shunt capacitors for both technology 1 and technology 2. It also contains the simulated and extracted capacitance from these S-parameters of the series and shunt capacitors. It contains the simulated and extracted capacitance for the shunt capacitor from one site in technology 1 and 95% prediction intervals (uncertainties) from electronic variation in the vector network analyzer (VNA), probe placement error, and the capacitance per unit length correction variation. Finally, it contains the extracted capacitance for multiple sites for the shunt capacitor in technology 1. All simulated S-parameters obtained using a 2.5D method of moments commercial solver. Simulated capacitance obtained from the simulated S-parameters. |
| distribution |
[ { "title": "data for Figure 3", "format": "Commented lines start with a % sign. Data lines are space delimited.", "mediaType": "text/plain", "description": "Calibrated S-parameters of a thru in both technology 1 and technology 2 that was not used to perform the calibration. Magnitudes of the S-parameters have units of dB. Phase of the S-parameters have units of degrees. Four port network analyzer used. Phase of S11 and S22 not included.", "downloadURL": "https://data.nist.gov/od/ds/mds2-3151/fig3.txt" }, { "title": "data for Figure 6", "format": "There are two sections. 1st section is the measured data and 2nd section is the simulated data. Commented lines start with a % sign. Data lines are space delimited.", "mediaType": "text/plain", "description": "Magnitude and phase of the measured and simulated S-parameters for the DCB1 series capacitor in technology 1. Phase unwrapping performed on the phase of S11 and S22 for the measured data.", "downloadURL": "https://data.nist.gov/od/ds/mds2-3151/fig6.txt" }, { "title": "data for Figure 7", "format": "There are two sections. 1st section is the measured data and 2nd section is the simulated data. Commented lines start with a % sign. Data lines are space delimited.", "mediaType": "text/plain", "description": "Magnitude and phase of the measured and simulated S-parameters for the DCB2 series capacitor in technology 2. Phase unwrapping performed on the phase of S11 and S22 for the measured data.", "downloadURL": "https://data.nist.gov/od/ds/mds2-3151/fig7.txt" }, { "title": "data for Figure 9", "format": "There are two sections. 1st section is the measured data and 2nd section is the simulated data. Commented lines start with a % sign. Data lines are space delimited.", "mediaType": "text/plain", "description": "Magnitude and phase of the measured and simulated S-parameters for the SHNT1 shunt capacitor in technology 1. Phase unwrapping performed on the phase of S11 and S22 for the measured data.", "downloadURL": "https://data.nist.gov/od/ds/mds2-3151/fig9.txt" }, { "title": "data for Figure 10", "format": "There are two sections. 1st section is the measured data and 2nd section is the simulated data. Commented lines start with a % sign. Data lines are space delimited.", "mediaType": "text/plain", "description": "Magnitude and phase of the measured and simulated S-parameters for the SHNT2 shunt capacitor in technology 2. Phase unwrapping performed on the phase of S11 and S22 for the measured data.", "downloadURL": "https://data.nist.gov/od/ds/mds2-3151/fig10.txt" }, { "title": "data for Figure 13", "format": "There are two sections. 1st section is the measured data and 2nd section is the simulated data. Commented lines start with a % sign. Data lines are space delimited.", "mediaType": "text/plain", "description": "Measured and simulated capacitance for SHNT 1, the shunt capacitor fabricated in technology 1 for various sites. Two of the columns are the upper and lower prediction interval (PI) for site 1 from combination of uncertainties from: probe placement, VNA electrical variation, and the capacitance per unit length. The rest of the columns are the measured capacitance for each of the other sites.", "downloadURL": "https://data.nist.gov/od/ds/mds2-3151/fig13.txt" }, { "title": "data for Figure 12", "format": "There are two sections. 1st section is the measured data and 2nd section is the simulated data. Commented lines start with a % sign. Data lines are space delimited.", "mediaType": "text/plain", "description": "Measured and simulated capacitance for SHNT 1, the shunt capacitor fabricated in technology 1. This data lists various prediction intervals (PI) for various combinations of uncertainty sources: probe placement (probe), VNA electrical variation (VNA), and the capacitance per unit length (cap), and all of the them together (all). Columns list the mean and and upper and lower PI of the specific combination listed in the column header.", "downloadURL": "https://data.nist.gov/od/ds/mds2-3151/fig12.txt" }, { "title": "data for Figure 8", "format": "There are three sections. 1. Measured capacitance of Tech. 1 and Tech. 2 series capacitors. 2. Simulated capacitance of the the Tech 1. series capacitor. 3. Simulated capacitance of the Tech 2. series capacitor. Commented lines start with a % sign. Data lines are space delimited.", "mediaType": "text/plain", "description": "Measured and simulated capacitance of the technology 1 (multi-layer CPW-G) and technology 2 (single-layer CPW-G) series capacitors.", "downloadURL": "https://data.nist.gov/od/ds/mds2-3151/fig8.txt" }, { "title": "data for Figure 11", "format": "There are three sections. 1. Measured capacitance of Tech. 1 and Tech. 2 shunt capacitors. 2. Simulated capacitance of the the Tech 1. shunt capacitor. 3. Simulated capacitance of the Tech 2. shunt capacitor. Commented lines start with a % sign. Data lines are space delimited.", "mediaType": "text/plain", "description": "Measured and simulated capacitance of the technology 1 (multi-layer CPW-G) and technology 2 (single-layer CPW-G) shunt capacitors.", "downloadURL": "https://data.nist.gov/od/ds/mds2-3151/fig11.txt" }, { "title": "README", "mediaType": "text/plain", "downloadURL": "https://data.nist.gov/od/ds/mds2-3151/3151_README.txt" } ] |
| identifier | ark:/88434/mds2-3151 |
| issued | 2024-02-26 |
| keyword |
[ "Indium Phosphide", "calibration", "coplanar waveguide", "monolithic microwave integrated circuit", "multiline thru-reflect-line", "on-wafer", "s-parameters", "terahertz", "vector network analyzer" ] |
| landingPage | https://data.nist.gov/od/id/mds2-3151 |
| language |
[ "en" ] |
| license | https://www.nist.gov/open/license |
| modified | 2024-01-23 00:00:00 |
| programCode |
[ "006:045" ] |
| publisher |
{ "name": "National Institute of Standards and Technology", "@type": "org:Organization" } |
| theme |
[ "Electronics:Semiconductors" ] |
| title | On-Wafer Device Characterization Including Uncertainty Estimates to 1.0 THz |
