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Federal
Small-Signal Model Verification and Analysis of Unmatched Multi-Finger HBT Cells at 220 GHz
National Institute of Standards and Technology —
This dataset contains the simulated and calibrated measured scattering parameters (S-parameters) of a via, a short-circuit manifold test structure, a single... -
Federal
On-Wafer Device Characterization Including Uncertainty Estimates to 1.0 THz
National Institute of Standards and Technology —
data published in paper "On-Wafer Device Characterization Including Uncertainty Estimates to 1.0 THz"This dataset contains the calibrated scattering parameters...- There are two sections. 1st section is the measured data and 2nd section is the simulated data. Commented lines start with a % sign. Data lines are space delimited.
- There are two sections. 1st section is the measured data and 2nd section is the simulated data. Commented lines start with a % sign. Data lines are space delimited.
- There are three sections. 1. Measured capacitance of Tech. 1 and Tech. 2 series capacitors. 2. Simulated capacitance of the the Tech 1. series capacitor. 3. Simulated capacitance of the Tech 2. series capacitor. Commented lines start with a % sign. Data lines are space delimited.
- There are two sections. 1st section is the measured data and 2nd section is the simulated data. Commented lines start with a % sign. Data lines are space delimited.
- There are two sections. 1st section is the measured data and 2nd section is the simulated data. Commented lines start with a % sign. Data lines are space delimited.
- There are three sections. 1. Measured capacitance of Tech. 1 and Tech. 2 shunt capacitors. 2. Simulated capacitance of the the Tech 1. shunt capacitor. 3. Simulated capacitance of the Tech 2. shunt capacitor. Commented lines start with a % sign. Data lines are space delimited.
- 4 more in dataset
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Federal
A Technique for Optimal On-Wafer Device Spacing at Millimeter-Wave Frequencies
National Institute of Standards and Technology —
This dataset contains the simulated data of a ground-signal-ground on-wafer probe landed on a microstrip variable-impedance device (DUT) with a 775 micron (um)...