Towards Prognostics of Power MOSFETs: Accelerated Aging and Precursors of Failure
This paper presents research results dealing with power MOSFETs (metal oxide semiconductor field effect tran- sistor) within the prognostics and health management of electronics. Experimental results are presented for the identification of the on-resistance as a precursor to failure of devices with die-attach degradation as a failure mechanism. Devices are aged under power cycling in order to trigger die-attach damage. In situ measurements of key electrical and thermal parameters are collected throughout the aging process and further used for analysis and computation of the on-resistance parameter. Experimental results show that the devices experience die-attach damage and that the on-resistance captures the degradation process in such a way that it could be used for the development of prognostics algorithms (data-driven or physics-based).
Find Related Datasets
Search by Tags
Click any tag below to search for similar datasets
Complete Metadata
| @type | dcat:Dataset |
|---|---|
| accessLevel | public |
| accrualPeriodicity | irregular |
| bureauCode |
[ "026:00" ] |
| contactPoint |
{ "fn": "Miryam Strautkalns", "@type": "vcard:Contact", "hasEmail": "mailto:miryam.strautkalns@nasa.gov" } |
| description | This paper presents research results dealing with power MOSFETs (metal oxide semiconductor field effect tran- sistor) within the prognostics and health management of electronics. Experimental results are presented for the identification of the on-resistance as a precursor to failure of devices with die-attach degradation as a failure mechanism. Devices are aged under power cycling in order to trigger die-attach damage. In situ measurements of key electrical and thermal parameters are collected throughout the aging process and further used for analysis and computation of the on-resistance parameter. Experimental results show that the devices experience die-attach damage and that the on-resistance captures the degradation process in such a way that it could be used for the development of prognostics algorithms (data-driven or physics-based). |
| distribution |
[ { "@type": "dcat:Distribution", "title": "2010_PHM_MOSFET.pdf", "format": "PDF", "mediaType": "application/pdf", "description": "2010_PHM_MOSFET.pdf", "downloadURL": "https://c3.nasa.gov/dashlink/static/media/publication/2010_PHM_MOSFET.pdf" } ] |
| identifier | DASHLINK_723 |
| issued | 2013-05-09 |
| keyword |
[ "ames", "dashlink", "nasa" ] |
| landingPage | https://c3.nasa.gov/dashlink/resources/723/ |
| modified | 2025-03-31 |
| programCode |
[ "026:029" ] |
| publisher |
{ "name": "Dashlink", "@type": "org:Organization" } |
| title | Towards Prognostics of Power MOSFETs: Accelerated Aging and Precursors of Failure |
