{"@type": "dcat:Dataset", "accessLevel": "public", "accrualPeriodicity": "irregular", "bureauCode": ["026:00"], "contactPoint": {"@type": "vcard:Contact", "fn": "Miryam Strautkalns", "hasEmail": "mailto:miryam.strautkalns@nasa.gov"}, "description": "This paper presents research results dealing with power MOSFETs (metal oxide semiconductor field effect tran- sistor) within the prognostics and health management of electronics. Experimental results are presented for the identification of the on-resistance as a precursor to failure of devices with die-attach degradation as a failure mechanism. Devices are aged under power cycling in order to trigger die-attach damage. In situ measurements of key electrical and thermal parameters are collected throughout the aging process and further used for analysis and computation of the on-resistance parameter. Experimental results show that the devices experience die-attach damage and that the on-resistance captures the degradation process in such a way that it could be used for the development of prognostics algorithms (data-driven or physics-based).", "distribution": [{"@type": "dcat:Distribution", "description": "2010_PHM_MOSFET.pdf", "downloadURL": "https://c3.nasa.gov/dashlink/static/media/publication/2010_PHM_MOSFET.pdf", "format": "PDF", "mediaType": "application/pdf", "title": "2010_PHM_MOSFET.pdf"}], "identifier": "DASHLINK_723", "issued": "2013-05-09", "keyword": ["ames", "dashlink", "nasa"], "landingPage": "https://c3.nasa.gov/dashlink/resources/723/", "modified": "2025-03-31", "programCode": ["026:029"], "publisher": {"@type": "org:Organization", "name": "Dashlink"}, "title": "Towards Prognostics of Power MOSFETs: Accelerated Aging and Precursors of Failure"}