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SiC Diode Test Data
Fabricated SiC diodes are tested in the temperature range of 300 degrees C to 600 degrees C.
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Complete Metadata
| @type | dcat:Dataset |
|---|---|
| accessLevel | public |
| bureauCode |
[ "019:20" ] |
| contactPoint |
{ "fn": "Gregorz Gilbert Cieslewski", "@type": "vcard:Contact", "hasEmail": "mailto:ggciesl@sandia.gov" } |
| dataQuality |
true
|
| description | Fabricated SiC diodes are tested in the temperature range of 300 degrees C to 600 degrees C. |
| distribution |
[ { "@type": "dcat:Distribution", "title": "SiC Diode Test Data.xlsx", "format": "xlsx", "accessURL": "https://gdr.openei.org/files/441/sic_diode_test_data.xlsx", "mediaType": "application/vnd.openxmlformats-officedocument.spreadsheetml.sheet", "description": "Excel Spreadsheet containing data from SiC diode test (IV curves)" } ] |
| DOI | 10.15121/1157514 |
| identifier | https://data.openei.org/submissions/6752 |
| issued | 2014-08-01T06:00:00Z |
| keyword |
[ "SiC", "diode", "egs", "geothermal", "high temp", "test" ] |
| landingPage | https://gdr.openei.org/submissions/441 |
| license | https://creativecommons.org/licenses/by/4.0/ |
| modified | 2017-08-08T22:12:40Z |
| programCode |
[ "019:006" ] |
| projectLead | Lauren Boyd |
| projectNumber | FY14 AOP 1.1.5.1 |
| publisher |
{ "name": "Sandia National Laboratories", "@type": "org:Organization" } |
| spatial |
"{"type":"Polygon","coordinates":[[[-123.25410625,35.586078228934],[-119.39800625,35.586078228934],[-119.39800625,39.702331271134],[-123.25410625,39.702331271134],[-123.25410625,35.586078228934]]]}"
|
| title | SiC Diode Test Data |
