Patent AT-E400897-T1: [Translated] SEMICONDUCTOR COMPONENT WITH SUPERPARAELECTRIC GATE INSULATOR
A semiconductor device includes a channel region 18 of semiconductor, a conductive gate electrode 12 adjacent to the channel region 18 and a gate dielectric 10 between the conductive gate electrode 12 and the channel region 18. The gate dielectric 10 is formed of a material that is a ferroelectric in bulk but in a superparaelectric state. The gate dielectric may be for instance of formula AXO3, where A is a group I or II element, and X is titanium, niobium, zirconium and/or hafnium. Such a gate dielectric 10 may be formed for example by low temperature deposition of the gate dielectric 10 or by using dopants of metal oxides to prevent domain growth, or both.
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| description | A semiconductor device includes a channel region 18 of semiconductor, a conductive gate electrode 12 adjacent to the channel region 18 and a gate dielectric 10 between the conductive gate electrode 12 and the channel region 18. The gate dielectric 10 is formed of a material that is a ferroelectric in bulk but in a superparaelectric state. The gate dielectric may be for instance of formula AXO3, where A is a group I or II element, and X is titanium, niobium, zirconium and/or hafnium. Such a gate dielectric 10 may be formed for example by low temperature deposition of the gate dielectric 10 or by using dopants of metal oxides to prevent domain growth, or both. |
| distribution |
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"description": "Access the complete Patent AT-E400897-T1: [Translated] SEMICONDUCTOR COMPONENT WITH SUPERPARAELECTRIC GATE INSULATOR on the official website.",
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| identifier | https://healthdata.gov/api/views/cjmv-bq2p |
| issued | 2025-09-05 |
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| modified | 2025-09-06 |
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| theme |
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| title | Patent AT-E400897-T1: [Translated] SEMICONDUCTOR COMPONENT WITH SUPERPARAELECTRIC GATE INSULATOR |
