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Nanometer-Scale Planar Reference Materials Project data:Year: 2025 Set: 00, ~10nm Hafnia on Silicon, deposited via ALD on 200mm wafers.

Published by National Institute of Standards and Technology | National Institute of Standards and Technology | Catalog Last Checked: September 02, 2026 at 07:19 PM | Dataset Last Updated: August 01, 2025
Data directory name: "CHIPS-6-02-25-00-set"Material under study: Set contains twelve, 200 mm wafers, each with 65 cycles ofatomic layer deposition of hafnia, using an Arradiance* Gemstar XT ALD System, Serial Number: 08.164310262022. *Any mention of commercial products within NIST web pages is forinformation only; it does not imply recommendation or endorsement by NIST.Blank Si wafers purchased from WaferPro: [PartNo: F08041], SEMI standard, 200 mm, SSP, Prime, Float Zone, (100) orientation,with backside laser mark. The wafers were left with native silicon oxide fromproduction, and were deposited during four days, after 2 hour instrumenttemperature stability warm ups, and approximately 3 seconds per cycle, and withthree wafers loaded in top, middle, and bottom locations during each deposition.This deposition approach should provide four correlated sets of deposition.This should allow us to do run-to-run sister wafer correlations for the top,middle, and bottom of our deposition system. Deposition #1 on 2025/06/25included wafers: 25-01 (top of chamber), 25-02 (middle of chamber), 25-03(bottom of chamber). Deposition #2 on 2025/06/27 included wafers: 25-04 (top ofchamber), 25-05 (middle of chamber), 25-06 (bottom of chamber). Deposition #3 on2025/06/30 included wafers: 25-07 (top of chamber), 25-08 (middle of chamber),25-09 (bottom of chamber). Deposition #4 on 2025/07/02 included wafers: 25-10(top of chamber), 25-11 (middle of chamber), 25-12 (bottom of chamber).Wafers 25-02 (#1, middle), 24-04 (#2, top), 25-08 (#3, middle), & 25-12 (#4,bottom) were selected to be diced at a future date. All data contained in thisfirst data release are from whole wafer measurements.Measurements in this first release: This repository contains the X-rayreflectometry (XRR) and variable wavelength spectroscopic ellipsometry (SE) fromtwelve, 200mm wafers.Spectroscopic Ellipsometry (SE): SE was collected using a J.A. Woolam M-2000 DISpectroscopic Ellipsometer, Serial Number: 1212020.A full wafer map of SE was taken for the four wafers, which are to be diced anddistributed as pieces to the semiconductor community. SE scans of all remainingwhole wafers is planned for a future release. X-ray reflectivity (XRR): XRR was collected using a Rigaku SmartLab 9kW Cu rotatinganode Instrument with a Graded parabolic mirror, a Ge 220 x 2 bounce monochromator, and a HyPix 3000 detector, Serial Number: BD73000647-01.Nine, XRR measurements are takenfor each of the four wafers, which are to be diced. These data sets are takenat the center of each wafer and at +/- 52.5 mm from the center in all quadrantdirections. The XRR data will be used to reduce the uncertainty within the SEdata sets provided. Preliminary XRR scans have been taken on the remainingeight wafers, with a more detailed mapping planned for a future release. Boththe whole wafers and the diced portions will be available for distributionwithin the semiconductor community via the NIST Office of Reference Materials asa future research grade test material.

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Complete Metadata
@type dcat:Dataset
accessLevel public
accrualPeriodicity irregular
bureauCode 
[
  "006:55"
]
contactPoint 
{
  "fn": "Donald Windover",
  "hasEmail": "mailto:donald.windover@nist.gov"
}
description Data directory name: "CHIPS-6-02-25-00-set"Material under study: Set contains twelve, 200 mm wafers, each with 65 cycles ofatomic layer deposition of hafnia, using an Arradiance* Gemstar XT ALD System, Serial Number: 08.164310262022. *Any mention of commercial products within NIST web pages is forinformation only; it does not imply recommendation or endorsement by NIST.Blank Si wafers purchased from WaferPro: [PartNo: F08041], SEMI standard, 200 mm, SSP, Prime, Float Zone, (100) orientation,with backside laser mark. The wafers were left with native silicon oxide fromproduction, and were deposited during four days, after 2 hour instrumenttemperature stability warm ups, and approximately 3 seconds per cycle, and withthree wafers loaded in top, middle, and bottom locations during each deposition.This deposition approach should provide four correlated sets of deposition.This should allow us to do run-to-run sister wafer correlations for the top,middle, and bottom of our deposition system. Deposition #1 on 2025/06/25included wafers: 25-01 (top of chamber), 25-02 (middle of chamber), 25-03(bottom of chamber). Deposition #2 on 2025/06/27 included wafers: 25-04 (top ofchamber), 25-05 (middle of chamber), 25-06 (bottom of chamber). Deposition #3 on2025/06/30 included wafers: 25-07 (top of chamber), 25-08 (middle of chamber),25-09 (bottom of chamber). Deposition #4 on 2025/07/02 included wafers: 25-10(top of chamber), 25-11 (middle of chamber), 25-12 (bottom of chamber).Wafers 25-02 (#1, middle), 24-04 (#2, top), 25-08 (#3, middle), & 25-12 (#4,bottom) were selected to be diced at a future date. All data contained in thisfirst data release are from whole wafer measurements.Measurements in this first release: This repository contains the X-rayreflectometry (XRR) and variable wavelength spectroscopic ellipsometry (SE) fromtwelve, 200mm wafers.Spectroscopic Ellipsometry (SE): SE was collected using a J.A. Woolam M-2000 DISpectroscopic Ellipsometer, Serial Number: 1212020.A full wafer map of SE was taken for the four wafers, which are to be diced anddistributed as pieces to the semiconductor community. SE scans of all remainingwhole wafers is planned for a future release. X-ray reflectivity (XRR): XRR was collected using a Rigaku SmartLab 9kW Cu rotatinganode Instrument with a Graded parabolic mirror, a Ge 220 x 2 bounce monochromator, and a HyPix 3000 detector, Serial Number: BD73000647-01.Nine, XRR measurements are takenfor each of the four wafers, which are to be diced. These data sets are takenat the center of each wafer and at +/- 52.5 mm from the center in all quadrantdirections. The XRR data will be used to reduce the uncertainty within the SEdata sets provided. Preliminary XRR scans have been taken on the remainingeight wafers, with a more detailed mapping planned for a future release. Boththe whole wafers and the diced portions will be available for distributionwithin the semiconductor community via the NIST Office of Reference Materials asa future research grade test material.
distribution 
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]
identifier ark:/88434/mds2-3930
issued 2025-12-04
keyword 
[
  "density",
  "gate oxide",
  "hafnia",
  "hybrid metrology",
  "roughness",
  "semiconductor",
  "spectroscopic ellipsometry",
  "thickness",
  "thin films",
  "x-ray reflectivity"
]
landingPage https://data.nist.gov/od/id/mds2-3930
language 
[
  "en"
]
license https://www.nist.gov/open/license
modified 2025-08-01 00:00:00
programCode 
[
  "006:045"
]
publisher 
{
  "name": "National Institute of Standards and Technology",
  "@type": "org:Organization"
}
theme 
[
  "Electronics:Thin-film electronics"
]
title Nanometer-Scale Planar Reference Materials Project data:Year: 2025 Set: 00, ~10nm Hafnia on Silicon, deposited via ALD on 200mm wafers.

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