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Modeling SiO2 Ion Impurities Aging in Insulated Gate Power Devices Under Temperature and Voltage Stress

Metadata Updated: December 7, 2023

This paper presents a formal computational methodology to explain how the oxide in semiconductors degrades over time and the dependence of oxide degradation on voltage and temperature stresses. The effects of aging are modeled and quantified by modification of the gate-source capacitance value. The model output is validated using experimental results of a thermally aged power semiconductor device.

Access & Use Information

Public: This dataset is intended for public access and use. License: No license information was provided. If this work was prepared by an officer or employee of the United States government as part of that person's official duties it is considered a U.S. Government Work.

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Dates

Metadata Created Date November 12, 2020
Metadata Updated Date December 7, 2023
Data Update Frequency irregular

Metadata Source

Harvested from NASA Data.json

Additional Metadata

Resource Type Dataset
Metadata Created Date November 12, 2020
Metadata Updated Date December 7, 2023
Publisher Dashlink
Maintainer
Identifier DASHLINK_866
Data First Published 2013-12-18
Data Last Modified 2020-01-29
Public Access Level public
Data Update Frequency irregular
Bureau Code 026:00
Metadata Context https://project-open-data.cio.gov/v1.1/schema/catalog.jsonld
Metadata Catalog ID https://data.nasa.gov/data.json
Schema Version https://project-open-data.cio.gov/v1.1/schema
Catalog Describedby https://project-open-data.cio.gov/v1.1/schema/catalog.json
Harvest Object Id 24694a3f-b19a-43d8-ad5c-993d5c839c30
Harvest Source Id 58f92550-7a01-4f00-b1b2-8dc953bd598f
Harvest Source Title NASA Data.json
Homepage URL https://c3.nasa.gov/dashlink/resources/866/
Program Code 026:029
Source Datajson Identifier True
Source Hash 0e754f489ce172bf9593aef465656a11a472711390bf9f1bc49364cfeb2a9284
Source Schema Version 1.1

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