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    • Insulated-Gate Bipolar Transistor (IGBT) Accelerated Aging

    Metadata Updated: October 23, 2025

    Preliminary data from thermal overstress accelerated aging using the aging and characterization system. The data set contains aging data from 6 devices, one device aged with DC gate bias and the rest aged with a squared signal gate bias. Several variables are recorded and, in some cases, high-speed measurements of gate voltage, collector-emitter voltage, and collector current are available. The data set is provided by the NASA Prognostics Center of Excellence (PCoE).

    Access & Use Information

    Public: This dataset is intended for public access and use. License: See this page for license information.

    Downloads & Resources

    Dates

    Metadata Created Date December 1, 2022
    Metadata Updated Date October 23, 2025

    Metadata Source

    Harvested from NASA Data.json

    Other Data Resources

    Additional Metadata

    Resource Type Dataset
    Metadata Created Date December 1, 2022
    Metadata Updated Date October 23, 2025
    Publisher PCoE
    Maintainer
    Identifier https://data.nasa.gov/api/views/7wwx-fk77
    Data First Published 2022-11-22
    Data Last Modified 2025-05-29
    Category Raw Data
    Public Access Level public
    Bureau Code 026:00
    Metadata Context https://project-open-data.cio.gov/v1.1/schema/catalog.jsonld
    Schema Version https://project-open-data.cio.gov/v1.1/schema
    Catalog Describedby https://project-open-data.cio.gov/v1.1/schema/catalog.json
    Harvest Object Id 1ae836ba-c066-4781-8c71-f18427a8e93f
    Harvest Source Id 58f92550-7a01-4f00-b1b2-8dc953bd598f
    Harvest Source Title NASA Data.json
    Homepage URL https://data.nasa.gov/dataset/insulated-gate-bipolar-transistor-igbt-accelerated-aging
    License https://www.usa.gov/government-works
    Program Code 026:021
    Source Datajson Identifier True
    Source Hash 9a3199c8a85f0034c743b624b0e98f6a88eadd3c1b1b82f911803b1d8d73870f
    Source Schema Version 1.1

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