Insulated-Gate Bipolar Transistor (IGBT) Accelerated Aging
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Bystander response to 2.5 Gy of protons in a human 3-dimensional skin model in 16 h after exposure
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Complete Metadata
| @type | dcat:Dataset |
|---|---|
| accessLevel | public |
| bureauCode |
[
"026:00"
]
|
| contactPoint |
{
"fn": "GeneLab Outreach",
"@type": "vcard:Contact",
"hasEmail": "mailto:genelab-outreach@lists.nasa.gov"
}
|
| description | Preliminary data from thermal overstress accelerated aging using the aging and characterization system. The data set contains aging data from 6 devices, one device aged with DC gate bias and the rest aged with a squared signal gate bias. Several variables are recorded and, in some cases, high-speed measurements of gate voltage, collector-emitter voltage, and collector current are available. The data set is provided by the NASA Prognostics Center of Excellence (PCoE). |
| distribution |
[
{
"@type": "dcat:Distribution",
"title": "Bystander response to 2.5 Gy of protons in a human 3-dimensional skin model in 16 h after exposure",
"format": "HTML",
"mediaType": "text/html",
"description": "GeneLab Study Page",
"downloadURL": "https://genelab-data.ndc.nasa.gov/genelab/accession/GLDS-151"
}
]
|
| identifier | https://data.nasa.gov/api/views/7wwx-fk77 |
| issued | 2022-11-22 |
| keyword |
[
"accelerated-aging",
"degradation",
"igbt",
"insulated-gate-bipolar-transistor",
"phm",
"prognostics",
"semiconductor",
"transistor"
]
|
| landingPage | https://data.nasa.gov/dataset/insulated-gate-bipolar-transistor-igbt-accelerated-aging |
| license | https://www.usa.gov/government-works |
| modified | 2025-05-29 |
| programCode |
[
"026:021"
]
|
| publisher |
{
"name": "PCoE",
"@type": "org:Organization"
}
|
| theme |
[
"Raw Data"
]
|
| title | Insulated-Gate Bipolar Transistor (IGBT) Accelerated Aging |