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Geometries and material properties for simulating semiconductor patterned bridge defects using the finite-difference time-domain (FDTD) method
An in-house developed finite-difference time-domain (FDTD) code has been used to simulate certain patterned defects as found in the semiconductor industry. Intrinsic to FDTD is the establishment of a simulation domain, a 3-D matrix of some arbitrary size (X, Y, Z) comprised of smaller cells (in our case, cubic with side length x), with each cell indexed to a material (including the vacuum) to form the geometry. Although the specific text files used as inputs to the in-house FDTD engine are provided, such files are likely incompatible with external FDTD solutions for the replication of our results. Therefore, entire 3-D matrices for our simulations have been reduced to single-vector, readable ASCII data files indexing the geometry and materials of the system, accompanied by text files that supply the optical constants used in the simulation as well as cross-sectional images that allow verification by others of their reconstruction of the 3-D matrix from the supplied 1-D ASCII data files.
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DOI Access to Geometries and material properties for simulating semiconductor patterned bridge defects using the finite-difference time-domain (FDTD) method
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Complete Metadata
| @type | dcat:Dataset |
|---|---|
| accessLevel | public |
| accrualPeriodicity | irregular |
| bureauCode |
[ "006:55" ] |
| contactPoint |
{ "fn": "Bryan Barnes", "hasEmail": "mailto:bryan.barnes@nist.gov" } |
| description | An in-house developed finite-difference time-domain (FDTD) code has been used to simulate certain patterned defects as found in the semiconductor industry. Intrinsic to FDTD is the establishment of a simulation domain, a 3-D matrix of some arbitrary size (X, Y, Z) comprised of smaller cells (in our case, cubic with side length x), with each cell indexed to a material (including the vacuum) to form the geometry. Although the specific text files used as inputs to the in-house FDTD engine are provided, such files are likely incompatible with external FDTD solutions for the replication of our results. Therefore, entire 3-D matrices for our simulations have been reduced to single-vector, readable ASCII data files indexing the geometry and materials of the system, accompanied by text files that supply the optical constants used in the simulation as well as cross-sectional images that allow verification by others of their reconstruction of the 3-D matrix from the supplied 1-D ASCII data files. |
| distribution |
[ { "title": "DOI Access to Geometries and material properties for simulating semiconductor patterned bridge defects using the finite-difference time-domain (FDTD) method", "format": "text/html", "accessURL": "https://doi.org/10.18434/T4/1500937", "description": "DOI Access to Geometries and material properties for simulating semiconductor patterned bridge defects using the finite-difference time-domain (FDTD) method" }, { "mediaType": "text/plain", "downloadURL": "https://data.nist.gov/od/ds/6A4A339C5C091C09E053245706817F211916/README.txt" }, { "mediaType": "text/plain", "downloadURL": "https://data.nist.gov/od/ds/6A4A339C5C091C09E053245706817F211916/README.txt.sha256" } ] |
| identifier | 6A4A339C5C091C09E053245706817F211916 |
| keyword |
[ "FDTD", "defects", "electromagnetic simulation", "finite-difference time-domain", "pattered defect inspection", "simulation input" ] |
| landingPage | https://data.nist.gov/od/id/6A4A339C5C091C09E053245706817F211916 |
| language |
[ "en" ] |
| license | https://www.nist.gov/open/license |
| modified | 2018-04-20 |
| programCode |
[ "006:045" ] |
| publisher |
{ "name": "National Institute of Standards and Technology", "@type": "org:Organization" } |
| theme |
[ "Manufacturing:Process measurement and control", "Metrology:Dimensional metrology", "Nanotechnology:Nanoelectronics" ] |
| title | Geometries and material properties for simulating semiconductor patterned bridge defects using the finite-difference time-domain (FDTD) method |
