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Precursor parameters have been identified to enable development of a prognostic approach for insulated gate bipolar transistors (IGBT). The IGBT were subjected to thermal over- stress tests using...
Search relevance: 297.43 | Views last month: 0 | Catalog Last Checked: August 04, 2025 at 02:21 PM -
Precursor parameters have been identified to enable development of a prognostic approach for insulated gate bipolar transistors (IGBT). The IGBT were subjected to thermal overstress tests using a...
Search relevance: 242.34 | Views last month: 1 | Catalog Last Checked: October 20, 2025 at 04:24 AM
