{
  "@type": "dcat:Dataset",
  "accessLevel": "public",
  "accrualPeriodicity": "irregular",
  "bureauCode": [
    "006:55"
  ],
  "contactPoint": {
    "fn": "Bryan Barnes",
    "hasEmail": "mailto:bryan.barnes@nist.gov"
  },
  "description": "An in-house developed finite-difference time-domain (FDTD) code has been used to simulate certain patterned defects as found in the semiconductor industry.  Intrinsic to FDTD is the establishment of a simulation domain, a 3-D matrix of some arbitrary size (X, Y, Z) comprised of smaller cells (in our case, cubic with side length x), with each cell indexed to a material (including the vacuum) to form the geometry.  Although the specific text files used as inputs to the in-house FDTD engine are provided, such files are likely incompatible with external FDTD solutions for the replication of our results.  Therefore, entire 3-D matrices for our simulations have been reduced to single-vector, readable ASCII data files indexing the geometry and materials of the system, accompanied by text files that supply the optical constants used in the simulation as well as cross-sectional images that allow verification by others of their reconstruction of the 3-D matrix from the supplied 1-D ASCII data files.",
  "distribution": [
    {
      "accessURL": "https://doi.org/10.18434/T4/1500937",
      "description": "DOI Access to Geometries and material properties for simulating semiconductor patterned bridge defects using the finite-difference time-domain (FDTD) method",
      "format": "text/html",
      "title": "DOI Access to Geometries and material properties for simulating semiconductor patterned bridge defects using the finite-difference time-domain (FDTD) method"
    },
    {
      "downloadURL": "https://data.nist.gov/od/ds/6A4A339C5C091C09E053245706817F211916/README.txt",
      "mediaType": "text/plain"
    },
    {
      "downloadURL": "https://data.nist.gov/od/ds/6A4A339C5C091C09E053245706817F211916/README.txt.sha256",
      "mediaType": "text/plain"
    }
  ],
  "identifier": "6A4A339C5C091C09E053245706817F211916",
  "keyword": [
    "FDTD",
    "defects",
    "electromagnetic simulation",
    "finite-difference time-domain",
    "pattered defect inspection",
    "simulation input"
  ],
  "landingPage": "https://data.nist.gov/od/id/6A4A339C5C091C09E053245706817F211916",
  "language": [
    "en"
  ],
  "license": "https://www.nist.gov/open/license",
  "modified": "2018-04-20",
  "programCode": [
    "006:045"
  ],
  "publisher": {
    "@type": "org:Organization",
    "name": "National Institute of Standards and Technology"
  },
  "theme": [
    "Manufacturing:Process measurement and control",
    "Metrology:Dimensional metrology",
    "Nanotechnology:Nanoelectronics"
  ],
  "title": "Geometries and material properties for simulating semiconductor patterned bridge defects using the finite-difference time-domain (FDTD) method"
}