{"@type": "dcat:Dataset", "accessLevel": "public", "accrualPeriodicity": "irregular", "bureauCode": ["006:55"], "contactPoint": {"fn": "Andrew Herzing", "hasEmail": "mailto:andrew.herzing@nist.gov"}, "description": "Electron tomography tilt series data, reconstruction, and data processing code for three-dimensional imaging of a gate-all-around (GAA) transistor layer extracted from a commercially available chip.\n\nThis data was collected on July 21, 2025.", "distribution": [{"downloadURL": "https://data.nist.gov/od/ds/mds2-4257/README.txt", "mediaType": "text/plain", "title": "README"}, {"downloadURL": "https://data.nist.gov/od/ds/mds2-4257/STEM_HAADF_Tomography_GAA_InPlane.zip", "mediaType": "application/x-zip-compressed", "title": "STEM HAADF Tomography GAA"}], "identifier": "ark:/88434/mds2-4257", "issued": "2026-08-26", "keyword": ["3D", "CHIPS", "HAADF", "STEM", "gate-all-around", "nanocharacterization", "tomography", "transistor"], "landingPage": "https://data.nist.gov/od/id/mds2-4257", "language": ["en"], "license": "https://www.nist.gov/open/license", "modified": "2026-07-22 00:00:00", "programCode": ["006:045"], "publisher": {"@type": "org:Organization", "name": "National Institute of Standards and Technology"}, "theme": ["Electronics:Semiconductors", "Materials:Materials characterization"], "title": "Scanning transmission electron tomography of in-plane gate-all-around transistors\nfrom a commercially available device\n"}