{"@type": "dcat:Dataset", "accessLevel": "public", "bureauCode": ["026:00"], "contactPoint": {"@type": "vcard:Contact", "fn": "Christopher Teubert", "hasEmail": "mailto:Christopher.A.Teubert@nasa.gov"}, "description": "Preliminary data from thermal overstress accelerated aging using the aging and characterization system. The data set contains aging data from 6 devices, one device aged with DC gate bias and the rest aged with a squared signal gate bias. Several variables are recorded and, in some cases, high-speed measurements of gate voltage, collector-emitter voltage, and collector current are available. The data set is provided by the NASA Prognostics Center of Excellence (PCoE).", "distribution": [{"@type": "dcat:Distribution", "downloadURL": "https://data.nasa.gov/docs/legacy/IGBTAgingData_04022009.zip", "format": "ZIP", "mediaType": "application/zip", "title": "IGBTAgingData_04022009.zip"}], "identifier": "https://data.nasa.gov/api/views/7wwx-fk77", "issued": "2022-11-22", "keyword": ["accelerated-aging", "degradation", "igbt", "insulated-gate-bipolar-transistor", "phm", "prognostics", "semiconductor", "transistor"], "landingPage": "https://data.nasa.gov/dataset/insulated-gate-bipolar-transistor-igbt-accelerated-aging", "license": "https://www.usa.gov/government-works", "modified": "2025-05-29", "programCode": ["026:021"], "publisher": {"@type": "org:Organization", "name": "PCoE"}, "theme": ["Raw Data"], "title": "Insulated-Gate Bipolar Transistor (IGBT) Accelerated Aging"}