{"@type": "dcat:Dataset", "accessLevel": "public", "accrualPeriodicity": "irregular", "bureauCode": ["026:00"], "contactPoint": {"@type": "vcard:Contact", "fn": "Miryam Strautkalns", "hasEmail": "mailto:miryam.strautkalns@nasa.gov"}, "description": "Lightning induced damage is one of the major concerns in aircraft health monitoring. Such short-duration high voltages can cause significant damage to electronic devices. This paper presents a study on the effects of lightning injection on power metal-oxide semiconductor field effect transistors (MOSFETs). This approach consisted of pin- injecting lightning waveforms into the gate, drain and/or source of MOSFET devices while they were in the OFF-state. Analysis of the characteristic curves of the devices showed that for certain injection modes the devices can accumulate considerable damage rendering them inoperable. Early results demonstrate that a power MOSFET, even in its off-state, can incur considerable damage due to lightning pin injection, leading to significant deviation in its behavior and performance, and to possibly early device failures.", "distribution": [{"@type": "dcat:Distribution", "description": "2009_PHM_Lightning.pdf", "downloadURL": "https://c3.nasa.gov/dashlink/static/media/publication/2009_PHM_Lightning.pdf", "format": "PDF", "mediaType": "application/pdf", "title": "2009_PHM_Lightning.pdf"}], "identifier": "DASHLINK_767", "issued": "2013-06-19", "keyword": ["ames", "dashlink", "nasa"], "landingPage": "https://c3.nasa.gov/dashlink/resources/767/", "modified": "2025-03-31", "programCode": ["026:029"], "publisher": {"@type": "org:Organization", "name": "Dashlink"}, "title": "Effects of Lightning Injection on Power-MOSFETs"}