Silicon Carbide Integrated Circuits for Extreme Environment Operation: High Radiation and High Temperature, Phase I

Metadata Updated: May 2, 2019

To extend the survivability of high temperature extreme environment missions, we propose to design, fabricate and test silicon carbide integrated circuits that are radiation tolerant and high temperature operation capable. Bulk silicon electronics mostly cease to operate properly at temperatures above the 150C to 200C range due to high off-state leakage. The Silicon-On-Insulator version pushes this limit further to 300C; however, the Venus surface exploration systems and gas giant probes require electronics that can operate above this temperature. A solution for high temperature electronics is the use of devices fabricated using wide bandgap semiconductors. Silicon carbide as being the most mature wide bandgap technology and shown to operate at temperature as high as 500-600C offers alternative device and circuit solutions for high temperature electronics. To this end, CoolCAD has the expertise to design, layout and fabricate silicon carbide integrated circuits to address this need, and extend the useful lifetime of vessels and probes in extreme environments.

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Public: This dataset is intended for public access and use. License: U.S. Government Work

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Dates

Metadata Created Date August 1, 2018
Metadata Updated Date May 2, 2019

Metadata Source

Harvested from NASA Data.json

Additional Metadata

Resource Type Dataset
Metadata Created Date August 1, 2018
Metadata Updated Date May 2, 2019
Publisher Space Technology Mission Directorate
Unique Identifier TECHPORT_93756
Maintainer
TECHPORT SUPPORT
Maintainer Email
Public Access Level public
Bureau Code 026:00
Metadata Context https://project-open-data.cio.gov/v1.1/schema/catalog.jsonld
Metadata Catalog ID https://data.nasa.gov/data.json
Schema Version https://project-open-data.cio.gov/v1.1/schema
Catalog Describedby https://project-open-data.cio.gov/v1.1/schema/catalog.json
Datagov Dedupe Retained 20190501230127
Harvest Object Id e6817a1a-e0f4-42ed-8105-98488b94c82e
Harvest Source Id 39e4ad2a-47ca-4507-8258-852babd0fd99
Harvest Source Title NASA Data.json
Data First Published 2017-12-01
Homepage URL https://techport.nasa.gov/view/93756
License http://www.usa.gov/publicdomain/label/1.0/
Data Last Modified 2018-07-19
Program Code 026:027
Source Datajson Identifier True
Source Hash 26af332ed0f883c5914c9ee92580b7fb3d97279b
Source Schema Version 1.1

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