CMOS Thermal Ox and Diffusion Furnace: Tystar Tytan 2000

Metadata Updated: March 8, 2017

Description:CORAL Names: CMOS Wet Ox, CMOS Dry Ox, Boron Doping (P-type), Phos. Doping (N-Type)This four-stack furnace bank is used for the thermal growth of silicon dioxide and diffusion by solid source. Specifications / Capabilities:Silicon Dioxide GrowthWet Oxide (Tube 1)-typically used for field isolation, masking layers, oxides greater than 120 nm, gate dielectric studies, and optical applicationsDry Oxide (Tube 2)-CMOS gate growth, slow controlled growth, oxides less than 120 nmBoron Solid Source Diffusion (Tube 3)Wafer doping technique for P-type applicationsPhosphorus Solid Source Diffusion (Tube 4)Wafer doping for N-type applications3[HTML_REMOVED], 4[HTML_REMOVED], and 6[HTML_REMOVED] wafersMaximum wafer thickness: 2.5 mmThe dry oxide tube (Tube 2) and the wet oxide tube (Tube 1) are for CMOS applications onlyRequires quarterly monitoring and monthly Trans-LC cleansNo MetalsUse only teflon tweezers, green wafer tweezers, or vacuum wantRCA Cleaning required before processingSilicon Wafers OnlyMax. Temp 1100 [HTML_REMOVED]C Scientific Opportunities / Applications:Etch masking layersInsulation layersSub-2nm gate dielectric

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Public: This dataset is intended for public access and use. License: No license information was provided. If this work was prepared by an officer or employee of the United States government as part of that person's official duties it is considered a U.S. Government Work.

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Dates

Metadata Created Date March 8, 2017
Metadata Updated Date March 8, 2017

Metadata Source

Harvested from Federal Laboratory Consortium Data.json

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Metadata Created Date March 8, 2017
Metadata Updated Date March 8, 2017
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