Advanced Materials Growth and Processing Facility

Metadata Updated: March 8, 2017

This most extensive of U.S. Army materials growth and processing facilities houses seven dedicated, state-of-the-art, molecular beam epitaxy and three metal organic chemical vapor deposition (MOCVD) systems that control, at the atomic level, growth of advanced semiconductors. Researchers design and engineer elements from across the periodic table for use in numerous optical devices, such as lasers and detectors, and in devices that span the electromagnetic spectrum and electronic components, such as field-effect transistors (FET) and thyristors.

Access & Use Information

Public: This dataset is intended for public access and use. License: No license information was provided. If this work was prepared by an officer or employee of the United States government as part of that person's official duties it is considered a U.S. Government Work.

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Dates

Metadata Created Date March 8, 2017
Metadata Updated Date March 8, 2017

Metadata Source

Harvested from Federal Laboratory Consortium Data.json

Additional Metadata

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Metadata Created Date March 8, 2017
Metadata Updated Date March 8, 2017
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